Alliance Memory has extended its 64M and 128M lines of high-speed CMOS synchronous DRAMs (SDRAM) with a new 2M x 32 device in the 90-ball 8mm by 13-mm by 1.2mm TFBGA package and a 4M x 32 device in the 86-pin 400mil plastic TSOP II package.
These devices are pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth. For these applications, the AS4C2M32S-7TCN and AS4C4M32S-7TCN feature access time from clock down to 5.4 ns and clock rates to 166MHz.
Available for a commercial temperature range of 0 degrees C to 70 degrees C, the SDRAMs operate from a single +3.3V (± 0.3 V) power supply and are lead – and halogen-free. The devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.